fqp8n60c/FQPF8N60C fqp8n60c/FQPF8N60C 600v n-channel mosfet general description features ? 7.5a, 600v, r ds(on) = 1.2 ? @v gs = 10 v ? low gate charge ( typical 28 nc) ? low crss ( typical 12 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter fqp8n60c FQPF8N60C units v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 7.5 7.5 * a - continuous (t c = 100c) 4.6 4.6 * a i dm drain current - pulsed (note 1) 30 30 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 230 mj i ar avalanche current (note 1) 7.5 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 147 48 w - derate above 25c 1.18 0.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqp8n60c FQPF8N60C units r jc thermal resistance, junction-to-case 0.85 2.6 c / w r cs thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w to-220 fqp series g s d to-220f fqpf series g s d ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g these n-channel enhancement mode power field effect transistors are produced using corise semiconductor?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply.
fqp8n60c/FQPF8N60C notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 7.3mh, i as = 7.5 a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 7.5a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.7 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.75 a -- 1.0 1.2 ? g fs forward transconductance v ds = 40 v, i d = 3.75 a (note 4) -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 965 1255 pf c oss output capacitance -- 105 135 pf c rss reverse transfer capacitance -- 12 16 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 7.5a, r g = 25 ? (note 4, 5) -- 16.5 45 ns t r turn-on rise time -- 60.5 130 ns t d(off) turn-off delay time -- 81 170 ns t f turn-off fall time -- 64.5 140 ns q g total gate charge v ds = 480 v, i d = 7.5a, v gs = 10 v (note 4, 5) -- 28 36 nc q gs gate-source charge -- 4.5 -- nc q gd gate-drain charge -- 12 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 7.5 a i sm maximum pulsed drain-source diode forward current -- -- 30 a v sd drain-source diode forward voltage v gs = 0 v, i s = 7.5 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 7.5 a, di f / dt = 100 a/ s (note 4) -- 365 -- ns q rr reverse recovery charge -- 3.4 -- c
fqp8n60c/FQPF8N60C 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i $ d = 8a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.20.40.60.81.01.21.4 10 -1 10 0 10 1 150 % not es : $ 1. v gs = 0v 2. 250 s pulse test 25 % i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 20v v gs = 10v note : t $ j = 25 % r ds(on) [ ! ], drain-source on-resistance i d , drain current [a] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : $ 1. 250 s pulse test 2. t c = 25 % i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : $ 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; $ 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
fqp8n60c/FQPF8N60C 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : $ 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : $ 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9-1. maximum safe operating area for fqp8n60c figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-2. maximum safe operating area for FQPF8N60C -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : $ 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : $ 1. v gs = 10 v 2. i d = 4 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ ] %
fqp8n60c/FQPF8N60C 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : $ 1. z " jc (t) = 0.85 /w m ax. % 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z " jc (t) sin gle pu lse d=0.5 0.02 0.2 0.05 0.1 0.01 z " jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : $ 1. z " jc (t) = 2.6 /w m ax. % 2. d uty factor, d=t 1 /t 2 3. t jm - t c = p dm * z " jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z " jc (t), thermal response t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for fqp8n60c figure 11-2. transient thermal response curve for FQPF8N60C t 1 p dm t 2 t 1 p dm t 2
fqp8n60c/FQPF8N60C resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p
fqp8n60c/FQPF8N60C dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fqp8n60c/FQPF8N60C 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 dimensions in millimeters
fqp8n60c/FQPF8N60C (7.00) (0.70) max1.47 (30 3.18 0.05 to-220f dimensions in millimeters
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